Investment of 882 million yuan, Tongguang Corporation's 8-inch SiC single crystal substrate project

On February 11th, the unveiling ceremony of the National Enterprise Technology Center of Hebei Tongguang Semiconductor Co., Ltd. (hereinafter referred to as "Tongguang") and the launch ceremony of the annual production of 200000 8-inch silicon carbide single crystal substrates project were held grandly in Baoding National High tech Industrial Development Zone.

Fengning 1GWh (4h) all vanadium flow battery production line won the strategic emerging industry dem

Recently, the list of "Demonstration Enterprises and Projects for Strategic Emerging Industries under the Supervision of Provincial State owned Assets Supervision and Administration Commission (2024)" was released, and the Fengning 1GWh (4h) Vanadium Flow Battery Production Line project of Hebei Geological and Mineral Group was listed as a demonstration project for strategic emerging industries under Hebei Provincial State owned Assets Supervision and Administration Commission.

Breach! The first large-scale shipment of domestically produced SiC epitaxial equipment

On February 9th, China Electronics Technology Group Corporation (CETC) officially announced that its 48 affiliated institutes have successfully achieved the first large-scale shipment of 30 sets of third-generation semiconductor SiC epitaxial equipment. This breakthrough marks significant progress for China in the field of third-generation semiconductor equipment and injects new vitality into the global semiconductor industry.