Following the era of large size, two more companies have successfully developed 12 inch SiC substrat

SiC, as a representative of third-generation semiconductor materials, has excellent characteristics such as high bandgap width, high hardness and wear resistance, and high thermal conductivity, making it an ideal material for manufacturing high-voltage, high-temperature, and high-frequency power devices. However, the preparation of large-sized SiC crystals has always been a global technical challenge, as the mainstream production size in the industry was still 6-8 inch substrates.

The total investment is about 900 million yuan! Huizhou Huiyang District, Guangdong Province plans t

In May of this year, China National Energy Storage Technology (Beijing) Co., Ltd. announced the completion of a Pre-A++round financing of over 100 million yuan. This financing is led by Ant Group, with Junheng Investment and Beijing Changping SME Growth Investment Fund as co investors. The funds will mainly be used for technology research and development and capacity expansion. The historical investors of Zhonghai Energy Storage are Sequoia China, Source Code Capital, Qingliu Capital, and Jingwei China.

Qingcheng Semiconductor: Significant breakthrough in "one furnace, multiple ingots, anti parallel fl

In the key stage of preparing silicon carbide single crystal materials, domestic forces have once again achieved a milestone breakthrough. Recently, Suzhou Qingcheng Semiconductor Technology Co., Ltd. announced significant progress in its joint research and development with Tsinghua University on the "Liquid Phase Method One Furnace Multi Ingot Anti Parallel Flow Growth Technology". It has achieved stable and synchronized growth of four P-type silicon carbide crystals, marking the company as the world's first semiconductor enterprise to master this technology and filling the technical gap in the large-scale growth of liquid phase silicon carbide crystals in multiple ingots.