2025-02-21
Who will break through the technological bottleneck of SiC single crystal growth between PVT method
Silicon carbide (SiC), as the core material of third-generation semiconductors, has sparked a technological revolution in fields such as new energy vehicles, 5G communication, and photovoltaic power generation due to its high temperature resistance, high frequency, and high voltage characteristics. However, the high threshold of its single crystal growth technology has always been a pain point in the industry. At present, the mainstream physical vapor transfer method (PVT method) and the emerging liquid-phase method (LPE method) have their own advantages and also face different challenges. This article will deeply analyze the process differences, core difficulties, and future prospects of these two technologies.