Tianyue Advanced: Global market share jumps to 22.8%, firmly ranking in the international top tier

In March 2025, Semicon China grandly opened in Shanghai, bringing together over 1300 semiconductor companies for this technology event. At the Asian Compound Semiconductor Conference held at the same time, Tianyue Advanced made a stunning debut with its globally launched full range of 12 inch silicon carbide substrate products, including 12 inch high-purity semi insulating silicon carbide substrates, 12 inch conductive P-type and 12 inch conductive N-type silicon carbide substrates, becoming the focus of attention throughout the event.

Production is about to begin! The second 100MW automated production line of Dali Energy Storage

On March 22nd, according to the Xiangyang Integrated Media Center, the production line of 1GWh vanadium electrolyte and the 100 megawatt hour new energy storage power station project of Dali Energy Storage are accelerating their production pace. It is expected that the second 100 megawatt stack automation production line will be put into operation in April.

World First! China's Jiufengshan Laboratory makes new breakthroughs in gallium nitride materials

According to the news from Jiufengshan Laboratory on March 22, the research team of Jiufengshan Laboratory has achieved the world's first preparation of 8-inch silicon-based nitrogen polar gallium nitride (N-polar GaNOI) high electron mobility material. This achievement not only marks a significant progress in the field of semiconductor materials in China, but also lays a solid foundation for the development of many cutting-edge technologies in the future.