NVIDIA processors are switching to new heat dissipation materials! Demand for silicon carbide substr

The heat dissipation bottleneck of future AI chips is being overcome by silicon carbide substrate materials

Winning the bid again! 7MW/28MWh！ Shanghai Electric Energy Storage won the bid again for the second

According to the Global Flow Battery Network, energy storage technology is becoming a key force in promoting sustainable energy development in the wave of energy revolution. Since winning the bid for the 10MW/40MWh vanadium flow energy storage project at the Fengxian Xinghuo Comprehensive New Energy Storage Technology Route Comparison Test Demonstration Base (Phase I) in May this year, Shanghai Electric Energy Storage Technology Co., Ltd. ("Electric Energy Storage") has recently won the bid for the second batch of 7MW/28MWh vanadium flow energy storage systems added to the project, providing further verification scenarios for Shanghai to build a diversified energy storage technology empirical platform.

San'an Optoelectronics completes commissioning of 8-inch SiC chip production line in Hunan

In August 2025, Sanan Optoelectronics officially announced that its Sanan Semiconductor Base in Hunan had achieved full operation of an 8-inch silicon carbide chip production line, marking another leap in China's leading third-generation semiconductor manufacturing capabilities.