China's SiC substrate industry: technological breakthrough: key leap in crystal growth and defect co

In the core technology fields of crystal growth and defect control, domestic enterprises have overcome multiple industry challenges and formed differentiated advantages.

1400 hours of ultra long standby time, scientists decipher the 'code' for the long lifespan of zinc

Recently, Li Xianfeng, a researcher of Dalian Institute of Chemical Physics, Chinese Academy of Sciences, made new progress in the research of new bromine based multi electron transfer flow battery system.

China's SiC substrate production capacity layout: clear echelon pattern, accelerated scale expansion

Against the backdrop of accelerated development in the global silicon carbide (SiC) semiconductor industry, Chinese domestic enterprises have achieved large-scale production in the 8-inch SiC substrate field, with continuous technological breakthroughs and expanding application scenarios.