Why can Sanan Optoelectronics remain at the forefront of the race in the increasingly fierce competition of third-generation semiconductors? Its leading advantage is not only reflected in the ramp up of production capacity, but more importantly, in the systematic competitiveness of "vertical integration of the entire industry chain+advanced process layout+diversified terminal introduction".

1、 12 inch silicon carbide layout accelerates, material link welcomes breakthrough window

In the material aspect, "large size, low defects, and high consistency" are the key factors for SiC substrate enterprises to break through. Sanan Optoelectronics is advancing the research and development of 12 inch silicon carbide substrates, becoming one of the few players in the world with the capability of 12 inches.

At present, the mainstream in the industry is still 6 inches, 8 inches are in the climbing stage, and 12 inches represent the "high ground" of material technology threshold and industry forward-looking layout. With the increasing trend of downstream electric drive controllers, 800V platforms, and data center SiC, the demand for larger sized substrates is also accelerating. Sanan takes the lead in layout and is expected to take the initiative in the next round of technological iteration.

2、 6-inch mass production is stable, and the 8-inch chip production line is accelerating

As the main battlefield of Sanan Optoelectronics Silicon Carbide, Hunan Sanan has achieved a monthly production capacity of 16000 6-inch SiC wafers, 2000 epitaxial wafers, and 1000 8-inch substrates. The 8-inch chip production line is currently under construction.

More importantly, Hunan Sanan has achieved integrated vertical integration capabilities from materials, epitaxy, chips to module packaging, covering the entire SiC device chain, which can meet the needs of different customers for "customization, high reliability, and fast delivery".

At present, Sanan Silicon Carbide products have achieved bulk shipments to charging pile customers such as Tonghe, Kesida, and Zhizhan, and continue to supply data center customers such as Delta and Lite On. They are also expanding their power applications in industrial control, new energy, servers, and more.

3、 Collaborative expansion of production lines, creating strategic industrial alliances

Sanan Optoelectronics not only independently promotes the construction of production lines, but also deeply binds with vehicle manufacturers and IDM enterprises through joint venture models to enhance market control.

The 8-inch automotive grade silicon carbide production line jointly built with STMicroelectronics has been put into operation and is expected to achieve mass production in Q4 2025. The product is mainly used for the main drive system of new energy vehicles;

The first phase project of Suzhou Sco Semiconductor, a joint venture with Ideal Automobile, has also been completed and will provide high-performance silicon carbide devices to Ideal Electric Vehicle Platform in the future.

This tripartite collaboration model of "IDM+OEM+vehicle manufacturer" has built an industrial closed loop of domestic SiC ecology, strengthening Sanan's bargaining power and discourse power in high-end markets such as electric vehicles.

4、 Speed up the race track, the Chinese market has become the global main battlefield

According to predictions from institutions such as Yole and TrendForce, the global silicon carbide device market is expected to exceed $12 billion by 2028, with the Chinese market accounting for over 40%.

Especially in key scenarios such as new energy vehicles, photovoltaic charging, and industrial power supplies, the acceleration of domestic substitution, combined with policy and local supporting advantages, is creating a catch-up window for Chinese SiC enterprises. Sanan Optoelectronics, with its self-developed full stack and scale advantages, is expected to continue leading the domestic silicon carbide camp.