Technological Breakthrough: Preparation of Nitrogen Polarized Gallium Nitride Materials

Gallium nitride (GaN), as a wide bandgap semiconductor material, has broad application prospects in high-frequency, high-power, high-voltage and other fields due to its unique physical and chemical properties. However, traditional gallium nitride material preparation techniques have many limitations, especially in the production of large-sized, high-quality materials. After years of dedicated research, the research team at Jiufengshan Laboratory has successfully overcome this challenge and achieved the first preparation of 8-inch silicon-based nitrogen polar gallium nitride (N-polar GaNOI) high electron mobility materials.

The key to this achievement lies in its unique material structure and preparation process. Silicon based nitrogen polar gallium nitride materials have higher electron mobility and lower defect density, and can operate stably at higher frequencies and powers. Meanwhile, the 8-inch size means that the material can meet the needs of large-scale integrated circuit manufacturing, providing possibilities for future system level chip integration.

Application prospects: Supporting the development of cutting-edge technologies

The technological breakthrough at Jiufengshan Laboratory is expected to have a profound impact on multiple cutting-edge technology fields. Firstly, in the field of next-generation communication, the high-frequency characteristics of nitrogen polar gallium nitride materials can significantly improve the transmission rate and spectral efficiency of communication systems, providing strong support for the development of 5G and even 6G communication technologies.

Secondly, in the field of autopilot, this material can be used to manufacture high-performance millimeter wave radar, improve the perception accuracy and reliability of the auto drive system, and lay the foundation for the popularization and promotion of autopilot technology.

In addition, the high power and efficiency characteristics of nitrogen polar gallium nitride materials can also play an important role in radar detection and microwave energy transmission. For example, in military radar systems, the RF front-end made of this material can improve the detection range and resolution of the radar, enhancing national defense and security capabilities. In the field of microwave energy transmission, this material can improve the efficiency and stability of energy transmission, providing technical support for future applications such as wireless charging and space solar power plants.

The first 100nm high-performance gallium nitride wafer PDK platform in China

In addition to breakthroughs in material preparation, Jiufengshan Laboratory has also successfully built the country's first 100nm high-performance gallium nitride wafer PDK platform. PDK (Process Design Kit) is an indispensable tool in integrated circuit design and manufacturing. It provides detailed process parameters and design rules for chip designers, enabling the designed chips to achieve high performance and reliability under specific manufacturing processes.

The completion of the 100nm high-performance gallium nitride wafer PDK platform at Jiufengshan Laboratory signifies an important step forward for China in the field of gallium nitride chip manufacturing. This platform can not only provide advanced process support for domestic chip design enterprises, but also attract international chip design companies to cooperate with Chinese manufacturing enterprises, enhancing China's position in the global semiconductor industry chain.

Future outlook: Leading the development of global semiconductor materials

The breakthrough of Jiufengshan Laboratory in the preparation of nitrogen polar gallium nitride materials is another important achievement of China's independent scientific and technological innovation. This achievement not only demonstrates the strong strength of China's research team in the field of semiconductor materials, but also gives China the initiative in the global semiconductor industry competition.

Public information shows that Jiufengshan Laboratory was officially approved for establishment in 2021 and is one of the nine major laboratories in Hubei Province. The laboratory is dedicated to the construction of compound semiconductor processes, testing, and material platforms, with full compatibility capabilities for 4/6/8-inch process platforms. In addition to the field of gallium nitride, Jiufengshan Laboratory has also made many achievements in the field of silicon carbide.

On August 1, 2023, the 6-inch silicon carbide (SiC) pilot line at Jiufengshan Laboratory was fully connected, and the first batch of trench MOSFET device wafers were successfully produced. This marks the laboratory's ability to provide full process technical services such as silicon carbide epitaxy, process flow, and testing.

Within 4 months, the laboratory has continuously overcome more than ten key process problems such as poor etching uniformity of silicon carbide devices, high warpage after injection, and micro grooves at the bottom of the gate. In addition, the laboratory has developed a high-temperature and high-energy ion implantation and activation process with low surface roughness and high activation rate, achieving low groove surface roughness etching. In addition, the laboratory has completed independent IP layout and developed key core single point processes for the preparation of silicon carbide trench devices, forming a complete set of process technology capabilities for independent IP.