The 8-inch silicon carbide resistance type long crystal furnace launched this time is a new advanced semiconductor material preparation equipment carefully crafted by Jingchi Electromechanical for the current market demand.

     The device adopts a unique structural design, combined with the most advanced process control theory and automation control methods, to achieve precise control of process parameters and highly intelligent equipment operation during the crystal growth process. Through innovative thermal field design, uniform radial temperature and wide range precision adjustable axial temperature gradient are achieved. High thermal field stability and long service life significantly improve the quality and yield of crystals.

      Compared with traditional induction type silicon carbide single crystal equipment, the resistance method SiC crystal growth furnace developed by Jingchi Electromechanical simplifies the process design process, has high thermal field stability, long thermal field service life, and good consistency in multi furnace growth of single crystals, making it particularly suitable for the growth of large-sized silicon carbide single crystals. This series of characteristics makes the resistance method equipment particularly suitable for enterprises that hope to quickly enter the field of SiC single crystal growth but lack a deep experience foundation.

      With excellent technical performance and market adaptability, Jingchi Electromechanical's 8-inch silicon carbide resistance type long crystal furnace has been recognized by multiple customers and has officially started small-scale delivery. This is not only a recognition from customers of Jingchi Electromechanical's technological innovation capabilities, but also a proof of Jingchi Electromechanical's precise grasp of market strategies. Jingchi Electromechanical is actively seeking deep cooperation with more silicon carbide substrate material manufacturers, aiming to jointly promote the application popularization and technological iteration of SiC materials, and create industry brilliance.

       As an incubated enterprise of Zhejiang University Hangzhou International Science and Technology Innovation Center, Jingchi Electromechanical will strive to promote the spirit of seeking truth, uphold the concept of innovation driven development, deepen industry university research cooperation, strengthen independent innovation capabilities, continuously optimize product performance, improve the efficiency of technology transfer, expand production scale, and meet the growing demand for high-performance silicon carbide materials in the global market.

      Zhao Yao, Sales Manager of Jingchi Electromechanical, said, "We are pleased to see the success of Jingchi Electromechanical's 8-inch silicon carbide resistance type long crystal furnace project. This is not only a manifestation of the company's technological progress, but also the result of our rapid response to market demand. We look forward to working with more partners to promote the development of the semiconductor industry

The success of this technological breakthrough and product validation not only enhances the competitiveness of Jingchi Electromechanical in domestic and international markets, but also injects new vitality into the development of China's semiconductor equipment manufacturing industry.

Source: Jingchi Electromechanical