Qingcheng Semiconductor: Creating full process patent barriers from materials to equipment

As a young but technologically strong enterprise, Suzhou Qingcheng Semiconductor was formerly known as Beijing Qingyan Semiconductor

One furnace with multiple ingots and anti parallel flow: breaking through the "ceiling" of liquid-phase technology

Suzhou Qingcheng Semiconductor has successfully achieved synchronous and stable growth of four 1-inch P-type crystals in a single furnace using a six inch liquid-phase vacuum furnace platform. Compared to traditional liquid-phase methods that typically use a single ingot structure and have lower efficiency, this innovation adopts a "one furnace multiple ingots+anti parallel flow" process design, significantly improving growth efficiency and crystal consistency.

Of particular note is that its anti parallel flow process cleverly guides the direction of heat flow relative to solute migration, effectively solving technical bottlenecks such as severe step coalescence of off-axis seed crystals, interface instability, and high structural defect rates in liquid-phase growth, greatly improving crystal integrity and quality.

It is reported that this technology has achieved a unit capacity increase of over 300% and a crystal cost reduction of 40-50% while ensuring yield and consistency, laying a key foundation for the industrialization of liquid-phase silicon carbide materials.

Targeting high-voltage devices and large-sized wafers, with promising potential

Compared to the PVT (Physical Vapor Transport) method of vapor phase epitaxy, the liquid-phase method has inherent advantages in preparing P-type doped silicon carbide crystals, especially suitable for key scenarios such as high-voltage and high current devices such as N-type IGBTs, power converters, and rail transit modules. The breakthrough of the "one furnace, multiple ingots" solution provides a mature path for the subsequent large-scale growth of 6-inch or even 8-inch liquid-phase silicon carbide crystals.

Suzhou Qingcheng has revealed that in the next stage, it will promote Multi Ingot Tongdao Technology Co., Ltd. (established in 2021) based on current achievements. It has already laid out over 50 core patented technologies in the silicon carbide material and equipment sector, covering multiple dimensions such as crystal growth processes, specialized reactor design, carbon precursor synthesis, and functional coatings.

The company is headquartered in Suzhou, with a research and development center in Beijing and a manufacturing base in western China. It has formed an integrated layout of "research and development pilot testing industrialization" and has continuously received support from major talent and industrial projects such as "Dongwu Leading" and "Gusu Leading".

Qingcheng has always adhered to the development vision of "Smart Tsinghua, Orange for the Future", insisting on independent controllability and original technology as the driving force, focusing on the technological breakthrough of the third-generation semiconductor material "liquid-phase method route", and committed to becoming a leading global supplier of wide bandgap semiconductor materials and equipment.

Industry Impact: Promoting the Liquid Phase Method from Laboratories to Production Lines

Liquid phase silicon carbide has been regarded as a promising "alternative route" in recent years, with advantages such as low defect rate, high doping efficiency, and lower equipment investment. It has clear technical potential in the application of large-sized P-type crystals and special devices. However, for a long time, the industrialization path has been slow due to issues such as complex material systems, low fluid control accuracy, and insufficient equipment packaging.

The breakthrough of Qingcheng Semiconductor not only achieved a key leap from polycrystalline synchronization to interface stability and uniformity of finished products, but also opened up a key node in the iteration of liquid-phase normal vector production equipment, which is expected to lead liquid-phase silicon carbide into a turning point from "technically feasible" to "scale usable".

【 Summary 】

Suzhou Qingcheng Semiconductor's breakthrough in the liquid-phase method of "one furnace, multiple ingots, anti parallel flow" technology not only enhances the engineering capability of liquid-phase processes, but also provides a new path sample for China's third-generation semiconductor industry. Driven by multiple factors such as policy promotion, independent controllability, and high-quality development of the industrial chain, the liquid-phase method is expected to complement the PVT method in the future, opening up new opportunities for silicon carbide materials to move towards higher end, greener, and more inclusive applications.